5 5 ( ? standard btb04 series passivated sensitive gate triacs in plastic envelope, intended for use in general purpose bi-directional switching and phase control applications, where high sensitivity is required in all four quadrants. t a =25 absolute maximum ratings characteristic symbol rating unit v a a a w -40-150 5 2 125 700 4 40 drm v i t (rms) i tsm p gm i gm t j t stg repetitive peak off-state voltage rms on-state current non-repetitive peak on-state current peak gate power peak gate current junction temperature storage temperature t a =25 electrical characteristics characteristic symbol test conditions min typ max unit v v v us ma ma ma ma ma ma ma 700 10 10 10 25 2.5 4.0 5.0 11 1.5 25 0.5 1.7 2 1.4 0.1 repetitive peak off-state voltage gate trigger current base-emitter saturation voltage gate trigger voltage holding current off-state leakage current on-state voltage gate controlled turn-on time v drm i gt i l v gt i h i d v t t gt v =12v; rl=33 t2+ g+ d ? v =12v; rl=33 t2+ g- d ? v =12v; rl=33 t2- g+ d ? v =12v; rl=33 t2- g+ d ? v =12v; rl=33 d ig=1.2igt i =5a t v = ; d drm(max) v tj=125 i =100ma gate open t g di /dt=5a/us v = ; d drm(max) v i =40 g to-220ab 48 hsin
part number voltage sensitivity type package BTB04-600SAP 600v 10 ma standard to-220ab product selector bt b 04 - 600 sap triac series insulation b: non insulated current: 4a voltage: 600v sensitivity = 10ma ordering information 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 it(rms)(a) a =180 p(w) 180 a a fig. 1: maximum power dissipation versus rms on-state current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 tc(c) a =180 it(rms)(a) fig. 2: rms on-state current versus case temperature. 1.e-03 1.e-02 1.e-01 1.e+00 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 tp(s) zth(j-a) zth(j-c) k = [zth/rth] fig. 3: relative variation of thermal impedance versus pulse duration. 1 10 100 012345678910 vtm(v) tj=25c tj=125c tj max. : vto = 0.85 v rd = 100 m w itm(a) fig. 4: on-state characteristics (maximum values) btb04 series 49 hsin
0 1 2 3 4 5 6 7 8 25 50 75 100 125 tj(c) (di/dt)c [tj] / (di/dt)c [tj = 125c] fig. 9: relative variation of critical rate of decrease of main current versus junction temperature. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 tj(c) igt ih & il igt, ih, il[tj] / igt, ih, il [tj = 25c] fig. 7: relative variation of gate trigger current, holding current and latching current versus junc- tion temperature (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 dv/dt (v/s) (di/dt)c [(dv/dt)c] / specified (di/dt)c fig. 8: relative variation of critical rate of decrease of main current versus reapplied dv/dt (typical val- ues). 0 1 2 3 4 5 6 7 8 25 50 75 100 125 tj(c) vd=vr=400v dv/dt [tj] / dv/dt [tj = 125c] fig. 10: relative variation of static dv/dt immunity versus junction temperature. 1 10 100 1000 0.01 0.10 1.00 10.00 tp(ms) tj initial=25c di/dt limitation: 50a/s itsm i2t itsm(a), i t (a s) 22 fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of i 2 t. 0 5 10 15 20 25 30 35 40 1 10 100 1000 number of cycles non repetitive tj initial=25c repetitive tc=110c t=20ms itsm(a) fig. 5: surge peak on-state current versus number of cycles. btb04 series 50 hsin
ordering type marking package weight base qty packing mode BTB04-600SAP BTB04-600SAP to-220ab 2.3 g 50 tube other information to-220ab (plastic) a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 package mechanical data btb04 series 51 hsin
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